Imaging Techniques
For the illustration of analyzed samples with up to 100.000 times magnification
Imaging analysis of conducting or semiconducting materials
Imaging analysis of insulators is possible due to thin-film deposition (Au Pd sputtering)
Material contrast (Z contrast) of micro-areas in the BSE mode
Topographic contrast in BSE mode
Local material analysis (e.g. phase identification, element analysis)
Element distribution images (e.g. EDX mapping, line scan)
The following detectors are used for the imaging analysis:
SE detector
Secondary electrons (SE) are low-energy electrons, which are generated by the electron beam. These are accelerated by an electrically-biased grid in the direction of the detector and produce a number of pulses proportionate to their quantity. These pulses are converted into images with greater depth of field and at a higher resolution than a light microscope’s pictures.
BSE detector
Backscattered Electrons (BSE) are beam electrons that are reflected from the surface by elastic scattering depending on the average atomic number (Z) of the material. Heavy elements strongly backscatter electrons, hence those areas appear brighter. Lighter elements tend to absorb electrons and thus appear darker. The BSE image is therefore also called material contrast image (Z-contrast) and allows to draw conclusions about the distribution of chemical materials in the sample. Furthermore the two-section BSE detector can be operated in Subtraction-mode. This produces a topographic contrast, where low-lying areas of the object will appear dark.
Comparison of different modes of operation
Technical equipment
Philips XL 30 TMP |
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Digital high-performance scanning electron microscope with tungsten filament |
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Magnification |
5x - 400.000x |
Resolution |
3,5 nm bei 30kV |
Beam current |
0,4 pA – 4µA max |
Detectors |
SE detector |
Five-axis motorized sample stage |
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Sample stage movement |
X = 50 mm; Y = 50 mm |
Vacuum operating range |
High vacuum< 5x10-6 mbar |
Application examples